Correlation between the optical loss and crystalline quality in erbium-doped GaN optical waveguides

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Correlation between the optical loss and crystalline quality in erbium-doped GaN optical waveguides.

Erbium-doped GaN (GaN:Er) epilayers were synthesized by metal organic chemical vapor deposition. GaN:Er waveguides were fabricated based on four different GaN:Er layer structures: GaN:Er/GaN/Al2O3, GaN:Er/GaN/AlN/Al2O3, GaN:Er/GaN/Al(0.75)Ga(0.25)N/AlN/Al2O3, and GaN/GaN:Er/GaN/Al2O3. Optical loss at 1.54 μm in these waveguide structures has been measured. It was found that the optical attenuat...

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ژورنال

عنوان ژورنال: Applied Optics

سال: 2013

ISSN: 1559-128X,2155-3165

DOI: 10.1364/ao.52.005426